Metrology

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Scanning-Electron Microscope

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SU8600
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Scanning Electron Microscope HITACHI SU8600

1 Resolution
0.6 nm (Accelerating voltage 15 kV, WD*1 = 4 mm, Photo magnification x270,000)
0.7 nm (Accelerating voltage*2 1 kV, WD*1 = 1.5 mm, Photo magnification x200,000)
The resolution shall be measured on a resolution measurement specimen (Gold particle on carbon).
*1 WD (Working Distance)
*2 Deceleration mode
2 Magnification
High magnification mode : x100 to x2,000,000
Low magnification mode : x20 to x20,000
NOTE: The magnification range is varied depending on WD and accelerating voltage.
The magnification is stipulated at 127 mm x 95 mm of display size (Photo magnification).
3 Electron optics system
(1) Accelerating voltage (Vacc) : 0.50 to 30.00 kV (0.01 kV steps)
(2) Landing voltage (Vland) : 0.01 to 20.00 kV (0.01 kV steps)
(3) Decelerating voltage : Maximum -3.50 kV
(4) Detectors : Scintillator/Photo multiplier detector
    Upper detector (BXB filter detector)
    Lower detector (Chamber SE/BSE detectors)
4 Specimen Stage
(1) Drive method : 5-axis motor drive
(2) Movable range   X-axis 0 to 110 mm
    Y-axis 0 to 110 mm
    Z-axis (WB) 1.5 to 40 mm
    R-axis (Rotation) 360° continuous
    T-axis (Tilt) -5° to 70°
(3) Maximum specimen size : 100 mm diameter
(4) Maximum specimen height : 36mm (Including the specimen holder and specimen stub)
(5) Specimen weight : Air lock method
(6) Specimen exchange : Control via GUI
(7) Control : SEM MAP function
    Position memory function
    Eccentric rotation function
    Eccentric tilt function [Specimen height: 36 mm * Including the specimen holder]
    Rotation assist function
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 HITACHI TM4000Plus
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Scanning Electron Microscope HITACHI TM4000Plus

Magnification : 10x-100,000x
Specimen Stage : X: 40 mm, Y: 35 mm, Rotation: 0-360 degree
Stage Control : Camera navigation System, 3 axes (X, Y, Rotation) computer controlled
Max. Sample Size : 80 mm (dia.), 50 mm (thickness)
Vacuum Mode : HV, LV
Signal Detector : BSE detector, High-Sensitivity Low- Vacuum SE detector
Image Signal : BSE, SE or Mix (BSE + SE)
Image Adjustment : Auto start, Auto focus, Auto brightness, Camera
Image Data Saving : 2,560 x 1,920, 1,289 x 960, 640 x 480 pixels
Image Format : BMP, TIFF, JPEG
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Film Thickness Measurement

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KLA-Tencor P-10 Surface Profiler
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KLA-Tencor P-10 Surface Profiler

Measurement of roughness, waviness, step heights on a surface​​​​

Vertical resolution : 1 Å (Max. vertical range 13 μm)
    25 Å (Max. vertical range 300 μm)
Horizontal resolution : 0.01 μm at 1 μm/s scan speed
Max. Scan length : 60 mm, 2-D scan only
Scan speed : 1 μm/s to 25 mm/s
Stylus force : 1 - 100 mg
Stylus radius : 12.5 μm
Display magnification : 60 – 240×
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KLA-Tencor P-7 Surface Profiler
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KLA-Tencor P-7 Surface Profiler

Measurement of roughness, waviness, step heights on a surface​​​​​

Vertical resolution : 1 Å (Max. vertical range 13 μm)
  : 25 Å (Max. vertical range 300 μm)
Horizontal resolution : 0.025 μm
Max. scan length : 150 mm, 2-D scan only
Scan speed : 2 μm/s to 25 mm/s
Stylus force : 0.5 – 50 mg
Stylus radius : 2 μm
Display magnification : 60 – 240×
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Everbeing SR-4 Resistivity Measurement System
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Everbeing SR-4 Resistivity Measurement System

Range from 0.001 to 800k Ohm per square
150 mm probe stand
Keithley 2450 source meter
Tungsten Carbide probe head
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Tip radius : 40.6 μm
Spring Pressure : 85 grams
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Pro4 640R Resistivity Measurement System
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Lucas Pro4-640R Resistivity Measurement System

Range from 0.001 to 800k Ohm per square
150 mm probe stand
Keithley2400 source meter
Tungsten Carbide and Osmium probe heads

Tip radius : 40.6 μm
Spring Pressure : 85 grams
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Thetametrisis FR-uProbe
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ThetaMetrisis FR-uProbe

Film thickness measurement : Silicon Dioxide, Silicon Nitride, Polysilicon, Amorphous Silicon, Positive/Negative Photoresist and etc.
Measurable films : up to 3 layers
Standard visible system with Lens in 10x magnification
Measuring light spot size : 25 μm
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NANOmetrics Nanospec AFT Model 4150 / 3000
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NANOmetrics Nanospec AFT Model 3000

Single film thickness measurement on silicon substrate:
Silicon Dioxide, Silicon Nitride, Polysilicon, Amorphous Silicon, Positive/Negative Photoresist and etc.
Standard visible system with Lens in 10x magnification
Measuring light spot size : 25 μm
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J.A. Woollam M-2000VI Spectroscopic Ellipsometer
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J.A. Woollam M-2000VI Spectroscopic Ellipsometer

Measure the optical constants : refractive Index, extinction coefficients and film Thickness for different materials
Wavelength : 370 nm to 1690 nm, ~ 580 wavelengths
All wavelengths are acquired simultaneously
Focused beam diameter in ~200 μm
Spectral resolution in 1.6 nm, 5 nm bandwidth
Test Base fixed angle of 66°, horizontal sample stage for 100 mm wafer
Automated z-height alignment
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Surface Metrology

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Microscope XE150S
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Atomic Force Microscope XE150S (Park XE150S AFM)

  • Non-contact AFM imaging to investigate and analyze a sample surface
  • Supports up to 6" wafers
  • 100 µm × 100 µm XY scan range
  • Up to 12 µm Z-scan range
  • Radius of the probe tip size: 10 nm
  • Enhanced acoustic enclosure
  • Fully motorized XY-stage travels the entire 150 mm × 150 mm
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Film Stress Measurement System SMSi 3800
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Film Stress Measurement System SMSi 3800

  • Measure the change of curvature induced in a sample due to the deposited film on a reflected substrate
  • Measure 1-D stress and produce a 3-D topographical profile
  • For wafer flatness and pattern measurements
  • Various stress constants
  • Wafer sizes:   2" to 8"
  • Thickness limit :   less than 11 mm
  • Statistical process control and spreadsheet compatibility
  • Automatic segmentation calculation
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Keyence 3D Laser
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Keyence 3D Laser Confocal Microscope

Keyence VK-X260K 3-D Laser Confocal Microscope provides non-contact, nanometer-level profile, roughness, and film thickness data on any materials

Light sources:   408 nm violet laser source / white-light source
Total magnification:   up to 28000×
Optical microscope:  

  • Pinhole confocal optical system
  • Four objectives (10×, 20×, 50× & 150×)

Light-receiving element:    16-bit photomultiplier 
Scanning method:  

  • Automatic upper/lower limit setting
  • High-speed light-intensity optimization (AAGII)
  • Poor reflected light intensity supplement (Double Scan)

Stages:  

  • Manual XY-Stage
  • 70 mm × 70 mm
  • Micrometric motorized Z-translation

Resolution:  

  • 1 nm lateral resolution
  • 0.5 nm Z-axis movement of objective lenses

Observation image:  

  • Super-high-resolution color CCD images
  • 16-bit laser-color confocal images
  • Confocal + ND filter optical system
  • C-laser differential interference images

Sample size:  

  • Up to 5"
  • Maximum sample height 28 mm

 

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Keysight B1500A Analyzer
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Perfict Lab. Probe Station with Keysight B1500A Analyzer

  • Probing stage
    • Sample sizes:   Up to 152.4 mm (6")
  • Probe:
    • Probe tip holder:   Triaxle cable
    • Current leakage:   <50 fA
    • Probe tip diameter:   20 μm
  • Stereo microscope:
    • Optical magnification:   20× – 400×
  • Keysight B1500A semiconductor device parameter analyzer:
    • Current-voltage (IV) measurements with 4 HRSMUs (High-Resolution Source-Monitor Units)
    • Current range:   ± 100 mA, measuring resolution 1 fA, sourcing resolution 5 fA
    • Voltage range:   ± 100 V, measuring resolution 0.5 μV, sourcing resolution 25 μV