Metrology

Dektak 150 Veeco Surface Profiler

Measurement of roughness, waviness, step heights on a surface
Stylus force:   1 to 15 mg with LIS 3 sensor
Stylus radius:   2.5 μm and 12.5 μm
Scan-length range:   55 mm
Sample stages:   Manual Θ, 360° rotation, manual leveling, auto X-Y 150 mm travel, 1 μm repeatability, 0.5 μm resolution
Data points per scan:   60,000 max.
Max. sample thickness:   up to 100 mm
Max. wafer size:   150 mm
Step height repeatability:   6 Ȧ, 1 σ on 1 μm step
Vertical range:   524 μm standard
Vertical resolution:   1 Ȧ max. (@ 6.55 μm range)

KLA-Tencor P-7 Surface Profiler

Measurement of roughness, waviness, step heights on a surface
Vertical resolution:

• 1 Å (Max. vertical range 13 μm)
• 25 Å (Max. vertical range 300 μm)

Horizontal resolution:   0.025 μm
Max. scan length:   150 mm, 2-D scan only
Scan speed:    2 μm/s to 25 mm/s
Stylus force:    0.5 – 50 mg
Stylus radius:    2 μm
Display magnification:     60 – 240×

KLA-Tencor P-10 Surface Profiler

Measurement of roughness, waviness, step heights on a surface
Vertical resolution:

• 1 Å (Max. vertical range 13 μm)
• 25 Å (Max. vertical range 300 μm)

Horizontal resolution:    0.01 μm at 1 μm/s scan speed
Max. scan length:   60 mm, 2-D scan only
Scan speed:    1 μm/s to 25 mm/s
Stylus force:    1 - 100 mg
Stylus radius:    12.5 μm
Display magnification:     60 – 240×

J.A. Woollam M-2000VI Spectroscopic Ellipsometer

• Measure optical constants: refractive Index, extinction coefficient and film thickness for various materials
• Wavelengths: 370 nm to 1690 nm, ~ 580 wavelengths
• All wavelengths are acquired simultaneously.
• Focused beam diameter of ~200 μm
• Spectral resolution of 1.6 nm, 5 nm bandwidth
• Tests are based on a fixed angle of 66°, on a horizontal sample stage for 100 mm wafers.
• Automated z-height alignment

NANOmetrics Nanospec AFT Model 4150 / 3000

• Single-film thickness measurements on silicon substrates
  • Silicon dioxide
  • Silicon nitride
  • positive/negative photoresists
  • polyimide
• Double-layer measurements on silicon substrates:
  • Silicon nitride-on-silicon dioxide
  • Polysilicon-on-silicon dioxide
  • Amorphous silicon-on-silicon dioxide
  • Negative/positive resist-on-silicon oxide
• Standard visible system with lens in 10× magnification
• Measuring light spot size:
  • 15 μm (Model 4150)
  • 25 μm (Model 3000)
• Automatic focusing and preset pattern of measurement point locations (Model 4150)

Atomic Force Microscope XE150S (Park XE150S AFM)

• Non-contact AFM imaging to investigate and analyze a sample surface
• Supports up to 6" wafers
• 100 µm × 100 µm XY scan range
• Up to 12 µm Z-scan range
• Radius of the probe tip size: 10 nm
• Enhanced acoustic enclosure
• Fully motorized XY-stage travels the entire 150 mm × 150 mm
• Non-contact AFM imaging to investigate and analyze a sample surface
• Supports up to 6" wafers
• 100 µm × 100 µm XY-scan range
• Up to 12 µm Z-scan range
• Radius of the probe tip size, 10 nm
• Enhanced acoustic enclosure
• Fully motorized X- stage travels the entire 150 mm × 150 mm

Film Stress Measurement System SMSi 3800

• Measure the change of curvature induced in a sample due to the deposited film on a reflected substrate
• Measure 1-D stress and produce a 3-D topographical profile
• For wafer flatness and pattern measurements
• Various stress constants
• Wafer sizes:   2" to 8"
• Thickness limit :   less than 11 mm
• Statistical process control and spreadsheet compatibility
• Automatic segmentation calculation

Four Dimension 280C Four-Point-Probe Mapping System

• Range from 0.001 to 800k ohm per square
• Single-point, 5-point or external PC mapping measurements
• 3" to 6" wafer capability
• Various probe heads selection

Keyence 3D Laser Confocal Microscope

Keyence VK-X260K 3-D Laser Confocal Microscope provides non-contact, nanometer-level profile, roughness, and film thickness data on any materials

Light sources:   408 nm violet laser source / white-light source
Total magnification:   up to 28000×
Optical microscope:  

• Pinhole confocal optical system
• Four objectives (10×, 20×, 50× & 150×)

Light-receiving element:    16-bit photomultiplier 
Scanning method:  

• Automatic upper/lower limit setting
• High-speed light-intensity optimization (AAGII)
• Poor reflected light intensity supplement (Double Scan)

Stages:  

• Manual XY-Stage
• 70 mm × 70 mm
• Micrometric motorized Z-translation

Resolution:  

• 1 nm lateral resolution
• 0.5 nm Z-axis movement of objective lenses

Observation image:  

• Super-high-resolution color CCD images
• 16-bit laser-color confocal images
• Confocal + ND filter optical system
• C-laser differential interference images

Sample size:  

• Up to 5"
• Maximum sample height 28 mm

Lucas Pro4-640R Resistivity Measurement System

• Range from 0.001 to 800k ohm per square
• 150 mm probe stand
• Keithley2400 source meter
• Tungsten carbide and osmium probe heads
• Tip radius:     0.0016 inches
• Spring pressure:    85 grams

Perfict Lab. Probe Station with Keysight B1500A Analyzer

• Probing stage
  • Sample sizes:   Up to 152.4 mm (6")
• Probe:
  • Probe tip holder:   Triaxle cable
  • Current leakage:   <50 fA
  • Probe tip diameter:   20 μm
• Stereo microscope:
  • Optical magnification:   20× – 400×
• Keysight B1500A semiconductor device parameter analyzer:
  • Current-voltage (IV) measurements with 4 HRSMUs (High-Resolution Source-Monitor Units)
  • Current range:   ± 100 mA, measuring resolution 1 fA, sourcing resolution 5 fA
  • Voltage range:   ± 100 V, measuring resolution 0.5 μV, sourcing resolution 25 μV

Tencor Sono Gauge 300

For single-point measurements of wafer thickness, aluminum film thickness and sheet-resistance of metals
Wafer diameter:   3”, 4”, 5” and 6”
Substrate thickness:   250 – 700 µm
Sheet resistance:    1 to 1999 Ω/sq.
Minimum metal film thickness:    100 Ȧ