Thermal Diffusion and Ion-Implantation Module

CVD
310PC PECVD (STS 310PC PECVD)

310PC PECVD (STS 310PC PECVD)

Processing:

  • Silicon dioxide
  • Silicon nitride
  • Silicon oxynitride
  • Amorphous silicon
CNT PECVD (SEKI AX5200 Microwave CNT PECVD)

CNT PECVD (SEKI AX5200 Microwave CNT PECVD)

Frequency:   2455 MHz
Processing:   CNT growth
Temperature:   900 oC

ET3000 Epitaxy (FirstNano ET3000 Epitaxy Reactor)

ET3000 Epitaxy (FirstNano ET3000  Epitaxy Reactor)

  • Epitaxial layers of silicon, silicon germanium, N-doped (PH3), P-doped (B2H6)
  • Fit for up to 4" wafers
LPCVD

LPCVD

Each deposition has its programmed flow of gas compositions, temperature and pressure

ASM LB45 LPCVD Furnace:
Polysilicon, amorphous silicon, N-doped amorphous silicon, silicon germanium, silicon nitride,
low-temperature oxide (LTO), phosphorous silicon glass (PSG)
 

Flokal LPCVD Furnace:
Polysilicon, amorphous silicon, silicon nitride,
low-stress silicon nitride, LTO, PSG

Oxford ALD (Oxford OpAL Plasma ALD)

Oxford ALD (Oxford OpAL Plasma ALD)

Thermal and plasma ALD

Processing:  

  • Aluminum oxide (Al2O3)
  • Zirconium oxide (ZrO2)
STS PECVD (STS Multiplex PECVD)

STS PECVD (STS Multiplex PECVD)

Processing:

  • Silicon dioxide
  • Silicon nitride
  • Silicon oxynitride
  • Amorphous silicon
TEOS PECVD (AST Cede-200 TEOS PECVD)

TEOS PECVD (AST Cede-200 TEOS PECVD)

Processing:

  • TEOS Silicon dioxide
Implantation
Diffusion Furnace (ASM Diffusion Furnace)

Diffusion Furnace (ASM Diffusion Furnace)

Operating temperature:   400 to 1150 oC
Processing: 

  • Dry & wet oxidation with TCE
  • N/P diffusion
  • Forming gas annealing and drive-in
AG610 RTP (Allwin21 AG610 RTP)

AG610 RTP (Allwin21 AG610 RTP)

  • Operating temperature in the range of 400 ℃ to 1000 ℃
  • Ion-implantation annealing
  • Silicide formation
  • Nitridation of thin gates, dielectrics & silicide
  • PSG/BPSG reflow
AW610 RTP (Allwin21 AW610 RTP)

AW610 RTP (Allwin21 AW610 RTP)

Wafer handling:   Manual loading of wafers into the oven, single-wafer processing
Wafer sizes:   Small samples and 2", 4" and 6" wafers
Ramp-up rate:   Programmable, 10 ℃ to 80 ℃ per second
Ramp-down rate:   Programmable, 10 ℃ to 80 ℃ per second
Operating temperature in the range of 250 ℃ to 800 ℃
Ion-implantation annealing
Silicide formation, nitridation of thin gates, dielectrics & silicide, PSG/BPSG reflow

RTP-600S (MPT RTP-600S)

RTP-600S (MPT RTP-600S)

Steady-state temperature stability:  ±2 ℃ in the range of 250 – 1150 ℃
Heating rate:   0 – 200 ℃/sec
Cooling rate:   150 ℃ max. /sec
Steady-state time:   1 – 600 sec

Implantation
CF-3000 Implanter (Varian CF-3000 Ion Implanter)

CF-3000 Implanter (Varian CF-3000 Ion Implanter)

Dose Energy:   10 to 180 keV
Max. Dose (ion/cm2):   1016
Processing:  

  • Arsenic
  • Phosphorus
  • Boron
  • BF2
  • Hydrogen implant