Wet Etching and CMP Module

Wet Station
Wet Stations A, B, C, D, E, F, G and H

Wet Stations A, B, C, D, E, F, G and H

Wet processing:  

  • Silicon Etch using KOH / TMAH (25%)
  • Photoresist Strip / ITO Etch
  • Aluminum Etch / Pad Oxide Etch
  • Oxide / Nitride Etch
  • Wafer Cleaning (RCA)
  • Wafer Cleaning (Piranha Clean)
  • Solvent Cleaning
Wet Station M

Wet Station M

  • MS2001 resist stripper
  • FHD5 manual developer
  • Quick dump rinsers
  • Small samples of sizes of up to 6" 
Wet Station O

Wet Station O

  • Hydrochloric acid etch prior to E-Beam metallization
  • DI water gun for rinsing
  • N2 gun for drying
  • Small samples of sizes of up to 6"
Wet Stations W, X, Y and Z

Wet Stations W, X, Y and Z

  • MS2001 resist stripper
  • FHD5 manual developer
  • Quick dump rinsers
  • Small samples of sizes of up to 6"
CMP
Buehler Polisher #1

Buehler Polisher #1

  • Polished for silicon, silicon oxide or silicon nitride
  • > 5 mm2 to 4" wafer size
  • 100 - 800 µm wafer thickness
Buehler Polisher #2

Buehler Polisher #2

  • Polished for copper, CNT, silicon, silicon oxide or silicon nitride
  • > 5 mm2 to 4" wafer size
  • 100 - 800 µm wafer thickness
GnP CMP

GnP CMP

Equipment model : POLI-400L
Polishing materials : Silicon dioxide or Polysilicon
Sample Size : 1"x1" or 4"
Wafer Thickness : 400-550 µm
Wafer Carrier : Membrane style with floating ring
Polishing platen and wafer
carrier speed range		 : 30-200 rpm
  Oscillating Arm Pad Conditioning
Electroplating
Copper Electroplating

Copper Electroplating

Plating metal : Copper
Substrate size
 		 : 4-inch wafer or coupon (<50mm length) attached
  on metallized 4-inch wafer (seed layer covering
  the whole wafer to the edge is needed.)
Wafer Thickness : Standard 525 micron