Mask-Making Module

Heidelberg DWL 2000 Laser Lithography System

With an Environment Chamber (providing a stable environment for the system)

• Laminar airflow (adjustable): 0.3 – 0.5 m/s
• Temperature stability: ± 0.1 °C
• Air quality: Class 10

Stage System (with linear motors, air bearings and interferometric position control)

• Maximum substrate size: 9" × 9"
• Maximum write area: 200 × 200 mm² (min. 5 mm from the substrate edge)
• Substrate thickness: 0 to 7 mm

Writing Performance

• Write modes: I and II
• Minimum feature sizes: 0.5 µm, 0.7 µm
• Edge roughness (3σ): 40 nm, 50 nm
• CD uniformity (3σ): 60 nm, 80 nm
• Alignment measurement accuracy (3σ): 60 nm, 70 nm
• Overlay accuracy (3σ): 160 nm, 200 nm
• Write speed (mm²/minute): 29, 110

JEOL JBX-6300FS E-Beam Lithography System

Writing Mode:   High-speed or high-precision
Beam Current:   30 pA to 20 nA
Scanning Speed:   12M to 250 Hz
Accelerate Voltage:   20, 50 or 100 kV
Max. Field Sizes (µm²):   High-speed mode: 2000 (20 kV), 1000 (50 kV) or 500 (100 kV); High-Precision Mode: 250 (20kV), 125 (50kV) or 62.5 (100kV)
Mask:   5" × 5" × 0.09"
Wafers:   4" or 2"
Nanoimprint Mask:   65 mm × 65 mm × 6.35 mm
Chip Samples:   2 cm × 2 cm, 1.5 cm × 1.5 cm or 1 cm × 1 cm