Photolithography Module

Stepper, Aligner and Bonder

Nanoscribe 3-D Printer

Resolution (depends on the objective lens and the resist):

3-D lateral feature size: ≤ 200 nm
2-D lateral resolution: ≤ 500 nm;
Vertical resolution: ≤ 1,500 nm

Speed:

Beam-scanning speed: 10 mm/s
Piezo-scanning speed: 100 µm/s

Range:

Motorized xy-scanning stage range: 100 × 100 mm²
x-y-z piezo range: 300 x 300 x 300 µm³
x-y galvo-scan range: 200 - 600 µm Ø depends on scanning objective

Maximum structure height:

IP-Q 10x lens DiLL: 8 mm
IP-S 25x lens DiLL: 3 mm
IP DiP 63x lens DiLL: 3 mm
Oil immersion with 170 µm glass: 150 µm

Minimum feature size

10x lens: ~2 µm x, y and ~10 µm z
25x lens: 0.6 µm x, y and ~3.3 µm z
63x lens: 150 nm x, y and 800 nm z

Objective:

Immersion Objective: 63×, NA = 1.4; WD = 190 µm,
for high-resolution structures, printing field (Galvo Ø) = 200 um;
Typical slicing distance = 0.3 µm; Typical hatching distance=0.2 µm
Immersion Objective: 25×; NA = 0.8; WD = 380 µm,
for mesoscale structures; Printing field (Gavle Ø) = 400 µm;
Typical slicing distance =1 µm; Typical hatching distance=0.5 µm
Air Objective: 20×, NA = 0.5; WD = 2100 µm,
or 2D maskless lithography; Printing field (Galvo Ø) = 600 µm;
Typical slicing distance=3-6 µm; Typical hatching distance= 0.7-1.2 µm
Immersion Objective: 10x, NA=0.3; WD=700 um,
for rapid prototyping; Printing field (Galvo Ø) =1000 µm;
Typical slicing distance= 5 µm; Typical hatching distance =1 µm

Sample holders:

Model	Substrate Type	Substrate Dimensions	Substrate Thickness
DiLL	DiLL substrate	25 mm × 25 mm	0.7 mm
	Microscope slide	24 – 26 mm × 50 – 76 mm	1.0 mm
	Borosilicate	Ø 30 mm	0.17 mm
	Cover slip	Ø 25.4 mm	0.3 mm
Multi-DiLL	DiLL substrate	25 mm x 25 mm	0.5 mm
2" wafer	wafer	Ø 2"	0.35 - 0.55 mm
4" wafer	wafer	Ø 4"	0.35 - 0.55 mm
10 × Ø 30 mm	Cover slip	Ø 30 mm	0.17 mm

Printing configuration:

Configuration	Objective	Immersion medium	Substrate(s)	Resist
Oil immersion	63× NA 1.4	oil	glass 170 µm	IP-L 780
Air	20× NA 0.5	air	Silicon, glass	AZ resist, SU8
Dip-in Laser Lithography (DiLL)	10x NA 0.3		silicon	IP-Q
	25× NA 0.8		ITO-coated glass, Silicon	IP-S
	63× NA 1.4		fused silica	IP-DIP

ASML Stepper

Light-source illumination	: i-line (365 nm)
Resolution	: 0.5 µm
Overlay alignment accuracy	: ± 0.1µm (3 σ)
Wafer sizes	: 4" or 6"
Field sizes	: 15 mm × 15 mm or 10 mm × 10 mm (on wafer)
Reduction ratio	: 5:1
Photomask size	: 5" square

Karl Suss Bonder XB8

Adhesive, Anodic, Eutectic bonding and Silicon fusion prebonding

Wafer size	: > 2 cm x 2 cm, 4", 6" & 8"
Substrate material	: Silicon or Pyrex Glass
Pressure	: 1x10e^-5 mbar to 3 bars
Bonding force	: 3500 N ~ 100K N (8")
Temperature	: RT to 500 ℃
Controllable Voltage range	: 0 – 2000 V
Controllable Current range	: 0-15 mA

SET ACCµRA100 Flip-Chip Bonder

Flip-chip/Die bonding

Substrate size	: 1 mm x 1 mm to 100 mm x 100 mm
Chip size	: 1 mm x 1 mm to 50 mm x 50 mm
Post-bonding accuracy	: ± 0.5 µm
Bonding force	: 3500 N ~ 100K N (8")
Bonding force	: 1 N to 1000 N
Temperature	: RT to 400℃

Heidelberg Maskless Aligner µMLA

Light sources UV LED	: i-line (365 nm)
Minimum feature size	: 0.8 µm
Alignment accuracy	: ≤ 1 µm
Substrate size	: 10 x 10mm² to 5" x 5"
Substrate thickness	: standard wafer and photomask
Allowed Photoresist	: AZ1505, AZ703 and AZ7908 only

Karl Suss MA6 #1 and #2

Light-source illumination	: i-line (365 nm)
Resolution	: 1 µm
Substrate sizes	: > 5 mm² to 2" or 4"
Photomask size	: 5” square
Exposure modes	: Contact (soft, hard, low vacuum and Vacuum) Proximity (exposure gap 1-300 µm); Flood Exposures
Alignment methods	: Top-Side Alignment (TSA); Bottom-Side Alignment (BSA)
Alignment accuracy	: TSA (down to 0.5 µm); BSA (down to 1 µm)
No. of machines installed	: 2

AB-M Aligner #1 (UV)/(DUV) and #2 (UV)

Light-source illumination	: DUV/UV wavelength selectable (500 W Mercury DUV lamp)
Alignment printing mode	: Manual
Soft contact	: Contact vacuum adjustable
Hard contact	: Full vacuum contact
Photomasks	: 5" square or 7" square
Substrate sizes	: > 5 mm² to 4" square, or 6"
Special feature	: Backside alignment using infrared
No. of machines installed	: 2

NILT Nanoimprint

Thermal NIL	: emperature up to 250 ℃
UV NIL	: @365nm (with temperature up to 200 ℃)
Imprint in Vacuum	: ~80 mbar
Imprint stack thickness	: Up to 2 mm
Replicable structures	: ~40 nm up to 100 µm
Imprint Pressure	: Up to 5 bar

SVG88 Coater Track and SVG88 Developer Track

Automatic tracks for resist coating and developing

No. of tracks	: 2
Coat track feature	: Vapor prime Chill plate
	: Coat module Backside rinse
	: Frontside edge-bead remover 2 hot plate ovens
Develop track	: Developer module, chill plate, 2 hot plate ovens
Coating uniformity	: ± 0.3 %
Wafer size	: 4" and 6"
Wafer loading/unloading	: Cassette to cassette

EVG Spray Coater

Speed range	: up to 10,000 rpm
Ramp-up speed	: 0-40,000 rpm/s
Heat-chuck temperature	: up to 70 ± 1 ℃
Spray speed integrate with heat chuck	: < 1,500 rpm
Spray-coating nozzle	: Ultrasonic Atomizer Nozzle
Syringe dispense rate	: 0.01 ml/s to 5 ml/s
Substrate sizes	: up to 200 mm or 150 mm × 150 mm

SUSS Coater

Spin-speed range	: 0 to 7000 rpm
Spin-speed acceleration	: 0 – 5000 rpm/s
Coat system	: Open Bowl; GYRSET
Substrate sizes	: > 5 mm² to 6" or 5" square for single-side coating, 4" for double-side coating
Others	: Programmable bowl auto-clean; Edge-bead remover

CEE Coater

Spin-speed range	: 0- 6,000 rpm
Spin-speed acceleration	: 0-30,000 rpm/s
Substrate sizes	: 4" or 6"
Others	: Frontside-edge bead remove

Desktop Coater

Spin-speed range	: 0 to 5,000 rpm
Substrate sizes	: > 5 mm² to 4" square

Solitec Coater #1

Spin-speed range	: 250 – 5000 rpm
Spin-speed acceleration	: 1000 – 4000 rpm/sec
Substrate sizes	: Larger than 5 mm, 2 to 4", 5" square for single-side coating or 4" for double-side coating

Laurell PDMS Coater

Spin-speed range	: 0- 6000 rpm
Spin-speed acceleration	: 0-30000 rpm/s
Substrate sizes	: 2" or 4"

Kurabo PDMS Mixer/Deaerator

Max. processing quantity	: 310 g x 1 container
Revolution	: 200 - 2000 rpm (Mixing mode) 400 -2200 rpm (Deaerate mode)
Rotation	: Max 800 rpm (Mixing mode) Max 66 rpm (Deaerate mode)
Setting time	: 0 – 30 mins x 9 steps

Hot Plates and Oven

Hot Plates

Computer temperature-controller with digital readout

Substrate sizes	: up to 6"
Temperature	: 50 to 250 ℃
Temperature uniformity	: ± 1 ℃

High-Temperature Conventional Oven

High-temperature oven	: Up to 450 ℃
Conventional oven temperature	: Up to 250 ℃
Substrate sizes	: Up to 6"

Vacuum Oven

Temperature	: Up to 300 ℃
Substrate sizes	: 1 cm² to 4"
Vacuum	: 0 to 30 in.Hg
Others	: N₂ purge

Unitemp Reflow Oven

Reflow Soldering (with Formic Acid Option)

Substrate size	: Fragments to 160 mm
Substrate Thickness	: Up to 10 mm
Vacuum Range	: Atmosphere to 10^-3 hPa or mbar
Oven Temperature	: Ambient to 350℃
Ramp Up Rate	: Up to 120 K/min
Gas Flow Control	: Nitrogen at max. 5 normal litre per min

Microscope

Nikon IC Inspection Microscope with a Digital Camera

Contrast methods	: BF /DF/ DIC/ Fluorescence
Magnification	: 50× - 1500×
Wafer holder	: up to 6"
Mask holder	: 5" square
Digital camera	: 5M-pixel CCD
Display	: 8.4" TFT LCD XGA
Software	: Dimension measurement tool