Sections
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Photolithography Module

Stepper, Aligner and Bonder
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AB-M Aligner #1 (UV)/ (DUV) and #2 (UV)
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AB-M Aligner #1 (UV)/ (DUV) and #2 (UV)

Light-source illumination:  DUV/UV wavelength selectable (500 W Mercury DUV lamp)
Alignment printing mode:   Manual
Soft contact:   Contact vacuum adjustable
Hard contact:   Full vacuum contact
Photomasks:   5" square or 7" square
Substrate sizes:   > 5 mm  to 4" square, or 6"
Special feature:   Backside alignment using infrared
No. of machines installed:   2

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ASML Stepper (ASML PAS5000/55 Stepper)
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ASML Stepper (ASML PAS5000/55 Stepper)

Light-source illumination:   i-line (365 nm)
Resolution:   0.5 µm
Overlay alignment accuracy:   ± 0.1µm (3 σ)
Wafer sizes:   4" or 6"
Field sizes:   15 mm × 15 mm or 10 mm × 10 mm (on wafer)
Reduction ratio:   5:1
Photomask size:   5" square

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Karl Suss Bonder SB6
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Karl Suss Bonder SB6

Anodic bonding and silicon fusion pre-bonding
Wafer size:   4”
Substrate materials:  Silicon or Pyrex Glass
Pressure:  5×10-5 mbar to 2 bars

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Karl Suss MA6 #1 and #2
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Karl Suss MA6 #1 and #2

Light-source illumination:   i-line (365 nm)
Resolution:   1 µm
Substrate sizes:  > 5 mm2 to 2" or 4"
Photomask size:  5” square
Exposure modes:   Contact (soft, hard, low vacuum and Vacuum)    
Proximity (exposure gap 1-300 µm); Flood Exposures
Alignment methods:   Top-Side Alignment (TSA); Bottom-Side Alignment (BSA)
Alignment accuracy:  TSA (down to 0.5 µm); BSA (down to 1 µm)
No. of machines installed:  2

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Nanoscribe 3-D Printer
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Nanoscribe 3-D Printer

 

Resolution (depends on the objective lens and the resist):  

  • 3-D lateral feature size: ≤ 200 nm
  • 2-D lateral resolution: ≤ 500 nm; 
  • Vertical resolution: ≤ 1,500 nm

Speed:  

  • Beam-scanning speed: 10 mm/s
  • Piezo-scanning speed: 100 µm/s

Range

  • Motorized xy-scanning stage range: 100 × 100 mm²
  • x-y-z piezo range: 300 x 300 x 300 µm³
  • x-y galvo-scan range: 200 - 600 µm Ø depends on scanning objective

Height:

  • Object height fine: ≤ 300 µm
  • Object height coarse: 3 mm

Objective:  

  • Immersion Objective: 63×, NA = 1.4; WD = 190 µm   
  • Immersion Objective: 25×; NA = 0.8; WD = 380 µm
  • Air Objective: 20×, NA = 0.5; WD = 2.1 mm

Sample holders:

Model Substrate Type Substrate Dimensions Substrate Thickness
DiLL DiLL substrate 25 mm × 25 mm 0.7 mm
Microscope slide 24 – 26 mm × 50 – 76 mm 1.0 mm
Cover slip Ø 30 mm 0.17 mm
Cover slip Ø 25.4 mm 0.3 mm
2" wafer wafer Ø 2" 0.35 - 0.55 mm
4" wafer wafer Ø 4" 0.35 - 0.55 mm
10 × Ø 30 mm Cover slip Ø 30 mm / 22 mm × 22  mm 0.17 mm


Printing configuration:

Configuration Objective Immersion medium Substrate(s) Resist
Oil immersion 63× NA 1.4 oil glass 170 µm IP-L 780
Air 20× NA 0.5 air Silicon, glass AZ resist, SU8
DiLL 25× NA 0.8   ITO-coated glass, Silicon IP-S
63× NA 1.4 fused silica IP-DIP
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CEE Coater
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CEE Coater

Spin-speed range:   0- 6,000 rpm
Spin-speed acceleration:   0-30,000 rpm/s
Substrate sizes:   4" or 6"
Others:   Frontside-edge bead remover

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Desktop Coater
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Desktop Coater

Spin-speed range:   0 to 5,000 rpm
Substrate sizes:   > 5 mm2  to 4" square

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EVG Spray Coater
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EVG Spray Coater

Speed range:   up to 10,000 rpm
Ramp-up speed:   0-40,000 rpm/s
Heat-chuck temperature:  up to 70 ± 1 oC
Spray speed integrate with heat chuck:   < 1,500 rpm
Spray-coating nozzle:   Ultrasonic Atomizer Nozzle
Syringe dispense rate:   0.01 ml/s to 5 ml/s
Substrate sizes:   up to 200 mm or 150 mm × 150 mm

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Solitec Coater #1
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Solitec Coater #1

Spin-speed range:   250 – 5000 rpm
Spin-speed acceleration:   1000 – 4000 rpm/sec
Substrate sizes:   Larger than 5 mm, 2 to 4", 5" square for single-side coating or 4" for double-side coating

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SUSS Coater
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SUSS Coater

Spin-speed range :   0 to 7000 rpm
Spin-speed acceleration:  0 – 5000 rpm/s
Coat system:   Open Bowl; GYRSET
Substrate sizes:   > 5 mm2 to 6" or 5" square for single-side coating, 4" for double-side coating
Others:   Programmable bowl auto-clean; Edge-bead remover

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SVG88 Coater Track and SVG88 Developer Track
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SVG88 Coater Track and SVG88 Developer Track

Automatic tracks for resist coating and developing
No. of tracks:   2
Coat track feature:   Vapor prime chill plate; Coat module backside rinse; Frontside edge-bead remover; two hot plate ovens
Develop track:   Developer module, chill plate,  two hot plate ovens
Coating uniformity:   ± 0.3 %
Wafer size:   4" and 6"
Wafer loading/unloading:   Cassette-to-cassette

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Hot Plates and Oven
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High-Temperature Conventional Oven
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High-Temperature Conventional Oven

High-temperature oven:   Up to 450 oC
Conventional oven temperature:   Up to 250 oC
Substrate sizes:  Up to 6"

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Hot Plates
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Hot Plates

Computer temperature-controller with digital readout
Substrate sizes:   up to 6"
Temperature:  50 to 250 oC
Temperature uniformity:  ± 1 oC

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Vacuum Oven
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Vacuum Oven

Temperature:   Up to 300 oC
Substrate sizes:   1 cm2 to 4"
Vacuum:   0 to 30 in.Hg
Others:   N2 purge

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Microscope
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Nikon IC Inspection Microscope with a Digital Camera
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Nikon IC Inspection Microscope with a Digital Camera

Contrast methods:   BF /DF/ DIC/ Fluorescence
Magnification:   50× - 1500×
Wafer holder:   up to 6"
Mask holder:  5" square
Digital camera:   5M-pixel CCD
Display:   8.4" TFT LCD XGA
Software:   Dimension measurement tool