Thermal Diffusion and Ion-Implantation Module

Implantation
CF-3000 Implanter (Varian CF-3000 Ion Implanter)

CF-3000 Implanter (Varian CF-3000 Ion Implanter)

Dose Energy : 10 to 150 keV
Max. Dose (ion/cm2) : 1015
Processing Arsenic, Phosphorus, Boron & BF2 implant
Oxidator
centrotherm SiC Oxidator 150

centrotherm SiC Oxidator 150

Processing : SiC oxidation and annealing
Temperature : 1350℃ (available gases: Ar, O2, N2, NO, N2O and 5% H2/N2)
  1500℃ (available gas: Ar)
Substrate sizes : 4" SiC substrate or small samples
CVD
LPCVD HTO

LPCVD HTO

Processing : High Temperature Oxide (HTO)
Temperature : 910℃
LPCVD

LPCVD

Each deposition has its programmed flow of gas compositions, temperature and pressure

ASM LB45 LPCVD Furnace:
Polysilicon, Amorphous silicon, N-doped Amorphous Silicon, Silicon Germanium, Silicon Nitride,
Low Temperature Oxide (LTO), Phosphorous Silicon Glass (PSG)

Diffusion Furnace (ASM Diffusion Furnace)

Diffusion Furnace (ASM Diffusion Furnace)

Operating temperature : 400 to 1150 ℃
Processing : Dry & Wet Oxidation, N/P diffusion, Forming Gas annealing and Drive in 
STS PECVD (STS Multiplex PECVD)

STS PECVD (STS Multiplex PECVD)

Processing:

  • Silicon dioxide
  • Silicon nitride
  • Silicon oxynitride
  • Amorphous silicon
Oxford PECVD

Oxford PECVD

Processing:

  • Silicon Dioxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Silicon Dioxide (TEOS)
Oxford ALD (Oxford OpAL Plasma ALD)

Oxford ALD (Oxford OpAL Plasma ALD)

Thermal and plasma ALD

Processing:  

  • Aluminum oxide (Al2O3)
  • Zirconium oxide (ZrO2)
NFF ALD

NFF ALD

Thermal ALD

Processing:  

  • Aluminum oxide (Al2O3)
Fiji ALD

Fiji ALD

Thermal and plasma ALD

Processing:

  • Al2O3, AlN, SiO2, Ga2O3, TiO2, TiN
CNT PECVD

CNT PECVD

Frequency : 2455 MHz
Processing : CNT growth
Temperature : 900℃
RTP-600S

RTP-600S (MPT RTP-600S)

Steady-state temperature stability : ±2℃ in the range of 250-1150℃
Heating rate : 0-200℃/sec
Cooling rate : 150℃ max/sec
Steady state time : 1-600 sec
AG610 RTP (Allwin21 AG610 RTP)

AG610 RTP (Allwin21 AG610 RTP)

  • Operating temperature in the range of 400 ℃ to 1000 ℃
  • Ion-implantation annealing
  • Silicide formation
  • Nitridation of thin gates, dielectrics & silicide
  • PSG/BPSG reflow
AW610 RTP (Allwin21 AW610 RTP)

AW610 RTP (Allwin21 AW610 RTP)

Wafer handling : Manual loading of wafers into the oven, single-wafer processing
Wafer sizes : Small samples and 2", 4" and 6" wafers
Ramp-up rate : Programmable, 10 ℃ to 80 ℃ per second
Ramp-down rate : Programmable, 10 ℃ to 80 ℃ per second

Operating temperature in the range of 250 ℃ to 800 ℃
Ion-implantation annealing
Silicide formation, nitridation of thin gates, dielectrics & silicide, PSG/BPSG reflow