Wet Etching and CMP Module

Wet Stations A, B, C, D, E, F, G and H

Wet processing:  

• Silicon Etch using KOH / TMAH (25%)
• Photoresist Strip / ITO Etch
• Aluminum Etch / Pad Oxide Etch
• Oxide / Nitride Etch
• Wafer Cleaning (RCA)
• Wafer Cleaning (Piranha Clean)
• Solvent Cleaning

Wet Station M

• MS2001 resist stripper
• FHD5 manual developer
• Quick dump rinsers
• Small samples of sizes of up to 6" 

Wet Station O

• Hydrochloric acid etch prior to E-Beam metallization
• DI water gun for rinsing
• N₂ gun for drying
• Small samples of sizes of up to 6"

Wet Stations W, X, Y and Z

• MS2001 resist stripper
• FHD5 manual developer
• Quick dump rinsers
• Small samples of sizes of up to 6"

Buehler Polisher #1

• Polished for silicon, silicon oxide or silicon nitride
• > 5 mm² to 4" wafer size
• 100 - 800 µm wafer thickness

Buehler Polisher #2

• Polished for copper, CNT, silicon, silicon oxide or silicon nitride
• > 5 mm² to 4" wafer size
• 100 - 800 µm wafer thickness

Silicon Grinder

• Mechanical grind for silicon oxide or silicon using a diamond wheel
• > 5 mm² to 4" wafer size
• 100 - 800 µm wafer thickness

Strasbaugh CMP

• Polished for silicon dioxide or polysilicon
• 4" wafer size
• 400 - 550 µm wafer thickness
• Touch-screen graphical user interface
• Hydrolift loading station

USI Wafer Cleaner

• Wafer surface scrubbing for pre-CMP and post -CMP process
• Fully automatic microprocessor control
• Completely enclosed chamber for washing, rinsing and drying
• 4" wafer cleaning
• 9" brush travel

Copper Electroplating

• Copper electroplating on 2" single-side or 4" single/double-side wafer size
• Ready for copper electroplating to fill small trenches with 300 - 550 µm wafer thickness