Wet Etching and CMP Module

Wet Station
Wet Stations A, B, C, D, E, F, G and H

Wet processing:  

  • Silicon Etch using KOH / TMAH (25%)
  • Photoresist Strip / ITO Etch
  • Aluminum Etch / Pad Oxide Etch
  • Oxide / Nitride Etch
  • Wafer Cleaning (RCA)
  • Wafer Cleaning (Piranha Clean)
  • Solvent Cleaning

Wet Station M
  • MS2001 resist stripper
  • FHD5 manual developer
  • Quick dump rinsers
  • Small samples of sizes of up to 6" 

Wet Station O
  • Hydrochloric acid etch prior to E-Beam metallization
  • DI water gun for rinsing
  • N2 gun for drying
  • Small samples of sizes of up to 6"

Wet Stations W, X, Y and Z
  • MS2001 resist stripper
  • FHD5 manual developer
  • Quick dump rinsers
  • Small samples of sizes of up to 6"
CMP
Buehler Polisher #1
  • Polished for silicon, silicon oxide or silicon nitride
  • > 5 mm2 to 4" wafer size
  • 100 - 800 µm wafer thickness

Buehler Polisher #2
  • Polished for copper, CNT, silicon, silicon oxide or silicon nitride
  • > 5 mm2 to 4" wafer size
  • 100 - 800 µm wafer thickness

Silicon Grinder
  • Mechanical grind for silicon oxide or silicon using a diamond wheel
  • > 5 mm2 to 4" wafer size
  • 100 - 800 µm wafer thickness

Strasbaugh CMP
  • Polished for silicon dioxide or polysilicon
  • 4" wafer size
  • 400 - 550 µm wafer thickness
  • Touch-screen graphical user interface
  • Hydrolift loading station

USI Wafer Cleaner
  • Wafer surface scrubbing for pre-CMP and post -CMP process
  • Fully automatic microprocessor control
  • Completely enclosed chamber for washing, rinsing and drying
  • 4" wafer cleaning
  • 9" brush travel
Electroplating
Copper Electroplating
  • Copper electroplating on 2" single-side or 4" single/double-side wafer size
  • Ready for copper electroplating to fill small trenches with 300 - 550 µm wafer thickness