Metrology

Film Thickness Measurement
Dektak 150 Veeco Surface Profiler
Measurement of roughness, waviness, step heights on a surface
Stylus force:   1 to 15 mg with LIS 3 sensor
Stylus radius:   2.5 μm and 12.5 μm
Scan-length range:   55 mm
Sample stages:   Manual Θ, 360° rotation, manual leveling, auto X-Y 150 mm travel, 1 μm repeatability, 0.5 μm resolution
Data points per scan:   60,000 max.
Max. sample thickness:   up to 100 mm
Max. wafer size:   150 mm
Step height repeatability:   6 Ȧ, 1 σ on 1 μm step
Vertical range:   524 μm standard
Vertical resolution:   1 Ȧ max. (@ 6.55 μm range)

KLA-Tencor P-7 Surface Profiler
Measurement of roughness, waviness, step heights on a surface
Vertical resolution:
  • 1 Å (Max. vertical range 13 μm)
  • 25 Å (Max. vertical range 300 μm)
Horizontal resolution:   0.025 μm
Max. scan length:   150 mm, 2-D scan only
Scan speed:    2 μm/s to 25 mm/s
Stylus force:    0.5 – 50 mg
Stylus radius:    2 μm
Display magnification:     60 – 240×

KLA-Tencor P-10 Surface Profiler
Measurement of roughness, waviness, step heights on a surface
Vertical resolution:
  • 1 Å (Max. vertical range 13 μm),
  • 25 Å (Max. vertical range 300 μm)
Horizontal resolution:   0.01 μm at 1 μm/s scan speed
Max. scan length:   60 mm, 2-D scan only
Scan speed:    1 μm/s to 25 mm/s
Stylus force:    1 - 100 mg
Stylus radius:    12.5 μm
Display magnification:     60 - 240×

J.A. Woollam M-2000VI Spectroscopic Ellipsometer
  • Measure optical constants: refractive Index, extinction coefficient and film thickness for various materials
  • Wavelengths: 370 nm to 1690 nm, ~ 580 wavelengths
  • All wavelengths are acquired simultaneously.
  • Focused beam diameter of ~200 μm
  • Spectral resolution of 1.6 nm, 5 nm bandwidth
  • Tests are based on a fixed angle of 66°, on a horizontal sample stage for 100 mm wafers.
  • Automated z-height alignment

NANOmetrics Nanospec AFT Model 4150 / 3000
  • Single-film thickness measurements on silicon substrates
    • Silicon dioxide
    • Silicon nitride
    • positive/negative photoresists
    • polyimide
  • Double-layer measurements on silicon substrates:
    • Silicon nitride-on-silicon dioxide
    • Polysilicon-on-silicon dioxide
    • Amorphous silicon-on-silicon dioxide
    • Negative/positive resist-on-silicon oxide
  • Standard visible system with lens in 10× magnification
  • Measuring light spot size:
    • 15 μm (Model 4150)
    • 25 μm (Model 3000)
  • Automatic focusing and preset pattern of measurement point locations (Model 4150)
Surface Metrology
Atomic Force Microscope XE150S (Park XE150S AFM)
  • Non-contact AFM imaging to investigate and analyze a sample surface
  • Supports up to 6" wafers
  • 100 µm × 100 µm XY scan range
  • Up to 12 µm Z-scan range
  • Radius of the probe tip size: 10 nm
  • Enhanced acoustic enclosure
  • Fully motorized XY-stage travels the entire 150 mm × 150 mm
  • Non-contact AFM imaging to investigate and analyze a sample surface
  • Supports up to 6" wafers
  • 100 µm × 100 µm XY-scan range
  • Up to 12 µm Z-scan range
  • Radius of the probe tip size, 10 nm
  • Enhanced acoustic enclosure
  • Fully motorized X- stage travels the entire 150 mm × 150 mm

Film Stress Measurement System SMSi 3800
  • Measure the change of curvature induced in a sample due to the deposited film on a reflected substrate
  • Measure 1-D stress and produce a 3-D topographical profile
  • For wafer flatness and pattern measurements
  • Various stress constants
  • Wafer sizes:   2" to 8"
  • Thickness limit :   less than 11 mm
  • Statistical process control and spreadsheet compatibility
  • Automatic segmentation calculation

Four Dimension 280C Four-Point-Probe Mapping System
  • Range from 0.001 to 800k ohm per square
  • Single-point, 5-point or external PC mapping measurements
  • 3" to 6" wafer capability
  • Various probe heads selection

Keyence 3D Laser Confocal Microscope
Keyence VK-X260K 3-D Laser Confocal Microscope provides non-contact, nanometer-level profile, roughness, and film thickness data on any materials
Light sources:   408 nm violet laser source / white-light source
Total magnification:   up to 28000×
Optical microscope:  
  • Pinhole confocal optical system
  • Four objectives (10×, 20×, 50× & 150×)
Light-receiving element:    16-bit photomultiplier 
Scanning method:  
  • Automatic upper/lower limit setting
  • High-speed light-intensity optimization (AAGII)
  • Poor reflected light intensity supplement (Double Scan)
Stages:  
  • Manual XY-Stage
  • 70 mm × 70 mm
  • Micrometric motorized Z-translation
Resolution:  
  • 1 nm lateral resolution
  • 0.5 nm Z-axis movement of objective lenses
Observation image:  
  • Super-high-resolution color CCD images
  • 16-bit laser-color confocal images
  • Confocal + ND filter optical system
  • C-laser differential interference images
Sample size:  
  • Up to 5"
  • Maximum sample height 28 mm

Lucas Pro4-640R Resistivity Measurement System
  • Range from 0.001 to 800k ohm per square
  • 150 mm probe stand
  • Keithley2400 source meter
  • Tungsten carbide and osmium probe heads
  • Tip radius:     0.0016 inches
  • Spring pressure:    85 grams

Perfict Lab. Probe Station with Keysight B1500A Analyzer
  • Probing stage
    • Sample sizes:   Up to 152.4 mm (6")
  • Probe:
    • Probe tip holder:   Triaxle cable
    • Current leakage:   <50 fA
    • Probe tip diameter:   20 μm
  • Stereo microscope:
    • Optical magnification:   20× – 400×
  • Keysight B1500A semiconductor device parameter analyzer:
    • Current-voltage (IV) measurements with 4 HRSMUs (High-Resolution Source-Monitor Units)
    • Current range:   ± 100 mA, measuring resolution 1 fA, sourcing resolution 5 fA
    • Voltage range:   ± 100 V, measuring resolution 0.5 μV, sourcing resolution 25 μV

Tencor Sono Gauge 300
For single-point measurements of wafer thickness, aluminum film thickness and sheet-resistance of metals
Wafer diameter:   3”, 4”, 5” and 6”
Substrate thickness:   250 – 700 µm
Sheet resistance:    1 to 1999 Ω/sq.
Minimum metal film thickness:    100 Ȧ