Mask-Making Module

Mask Writing System
Heidelberg DWL 2000 Laser Lithography System
With an Environment Chamber (providing a stable environment for the system)
  • Laminar airflow (adjustable): 0.3 – 0.5 m/s
  • Temperature stability: ± 0.1 °C
  • Air quality: Class 10
Stage System (with linear motors, air bearings and interferometric position control)
  • Maximum substrate size: 9" × 9"
  • Maximum write area: 200 × 200 mm² (min. 5 mm from the substrate edge)
  • Substrate thickness: 0 to 7 mm
Writing Performance
  • Write modes: I and II
  • Minimum feature sizes: 0.5 µm, 0.7 µm
  • Edge roughness (3σ): 40 nm, 50 nm
  • CD uniformity (3σ): 60 nm, 80 nm
  • Alignment measurement accuracy (3σ): 60 nm, 70 nm
  • Overlay accuracy (3σ): 160 nm, 200 nm
  • Write speed (mm2/minute): 29, 110

JEOL JBX-6300FS E-Beam Lithography System
Writing Mode:   High-speed or high-precision
Beam Current:   30 pA to 20 nA
Scanning Speed:   12M to 250 Hz
Accelerate Voltage:   20, 50 or 100 kV
Max. Field Sizes (µm2):   High-speed mode: 2000 (20 kV), 1000 (50 kV) or 500 (100 kV); High-Precision Mode: 250 (20kV), 125 (50kV) or 62.5 (100kV)
Mask:   5" × 5" × 0.09"
Wafers:   4" or 2"
Nanoimprint Mask:   65 mm × 65 mm × 6.35 mm
Chip Samples:   2 cm × 2 cm, 1.5 cm × 1.5 cm or 1 cm × 1 cm
Scanning-Electron Microscope
Scanning-Electron Microscope JEOL JSM-6490
Resolution:   HV-mode 3 nm (30 kV), 15 nm (1 kV); LV-mode 4 nm (30 kV)
Magnification:   ×8 to ×300000 (at 11 kV or higher); ×5 to ×300000 (at 10 kV or lower)
Specimen Stages:    X: 125 mm, Y: 100 mm, Z: 5-80 mm; Tilt: -10 to +90 degree
Image Mode:   Secondary electron image
Accelerating Voltage:   0.3 kV to 30 kV
Filament:   Factory pre-centered filament
Auto Functions:   Focus, brightness, contrast, stigmator
Motor Control:   5 axes computer-controlled
Frame Stored:   640 × 480, 1280 × 960 pixels
Image Formats:   BMP, TIFF, JPEG