Dry Etching and Sputtering Module

Dry Etching
AOE Etcher (STS ICP AOE Etcher)

Gases available:  C4F8, CF4, CHF3, O2, N2, H2, He & Ar
RF power sources:    1× 3000 W (max.) at 13.56 MHz for the coil electrode, 1× 600 W (max.) at 13.56 MHz for the platen electrode
Electrode coolant system:   -5 to 30 oC
High-speed turbo molecular pump:   pumping speed of 2000 L/s at 48000 rpm
Fully automatic loadlock transfer system
Substrate size:   4" single silicon or quartz wafer


Silicon oxide etch
Minimum Line/Space:   0.5 µm
Silicon oxide etch E/R:   > 2500 Ȧ/min
Selectivity to photoresist:   > 4:1
Selectivity to polysilicon:   > 15:1
Uniformity:   7.5%


DRIE Etcher #1 (STS ICP DRIE Etcher)
Gases available:   C4F8, SF6, O2, N2, He & Ar
RF power sources:  
1 × 1000 W (max.) at 13.56 MHz for the coil electrode
1 × 300 W (max.) at 13.56 MHz for the platen electrode
Electrode coolant system:   5 to 30 oC
High-speed turbo molecular pump:   pumping speed of 1000 L/s at 36000 rpm
Fully automatic loadlock transfer system
Substrate size:   4" wafers

Silicon etch:
Minimum line/space: 0.5 µm
Low-rate silicon etch E/R: from 500 Ȧ/cycle
Normal-rate silicon etch E/R: up to 2 µm/min
Selectivity to photoresist: > 50:1
Selectivity to oxide: > 80:1
Uniformity: 7%



DRIE Etcher #2 (STS ICP DRIE Etcher)

Gases available:   C4F8, SF6, O2, N2, He & Ar
RF power sources:  
1 × 3600 W (max.) at 13.56 MHz for the primary source
1 × 3000 W (max.) at 13.56 MHz for the secondary source
1 × 200 W (max.) at 13.56 MHz for the platen electrode
1 × 200 W (max.) at 300 - 500 kHz for the platen electrode
Electrode coolant system:   20 to 40 oC
High-speed turbo molecular pump:   pumping speed of 2350 L/s at 25000 rpm
Fully automatic loadlock transfer system
Substrate size:   4" wafers

Silicon etch:
Minimum line/space: 0.5 µm
Aspect ratio: up to 60:1
Low-rate silicon etch E/R: From 0.7 µm/min (700 Ȧ/Loop)
Normal-rate silicon etch E/R: 2 µm/min
Fast-rate silicon etch E/R: 18 µm/min
Selectivity to photoresist: from 12:1 to 250:1
Selectivity to oxide: from 24:1 to 500:1
Uniformity: < 5%


DRIE Etcher #3 (SPTS Rapier DRIE Etcher)

Gases available:   C4F8, SF6, O2, N2, He & Ar
RF power sources:  
1 × 1000 W (max.) at 13.56 MHz for the coil electrode
1 × 300 W (max.) at 13.56 MHz for the platen electrode
Electrode coolant system:   20 oC
High-speed turbo molecular pump:   pumping speed of 1000 L/s at 36000 rpm
Fully automatic loadlock transfer system
Substrate size:   4" wafers

Silicon etch:
Minimum line/space: 1 µm
Low-rate silicon etch E/R: 1 µm/min
Normal-rate silicon etch E/R: up to 2 µm/min
Selectivity to photoresist: > 50:1
Selectivity to oxide: > 100:1
Uniformity: 7%


GaN Etcher (STS ICP GaN Etcher)

Gases available:   BCl3, Cl2, CH4, SF6, O2, He & Ar
RF power sources:  
1 × 1000 W (max.) at 13.56 MHz for the coil electrode
1 × 300 W (max.) at 13.56 MHz for the platen electrode
Electrode coolant system:   5 to 30 oC
High-speed turbo molecular pump:   pumping speed of 1000 L/s at 36000 rpm
Fully automatic loadlock transfer system
Substrate sizes:   2", 4" or 6” single wafers or specimens

GaN etch:
E/R: ~5000 Ȧ/min
Selectivity to oxide: 10:1

Sapphire etch:
E/R: ~700 Ȧ/min
Selectivity to oxide: 1.5:1


Poly Etcher (STS ICP Poly Etcher)
Gases available:   HBr, Cl2, O2, N2, He & Ar
RF power sources:
1 × 1000 W (max.) at 13.56 MHz for the coil electrode
1 × 300 W (max.)  at 13.56 MHz for the platen electrode
Electrode coolant system:   20 oC
High-speed turbo molecular pump:   pumping speed of 1000 L/s at 36000 rpm
Fully automatic loadlock transfer system
Substrate size:   4” single wafers

Polysilicon etch:
Minimum line/space:   0.5 µm
Low-Rate polysilicon etch E/R:   ~ 900 Ȧ/min
Selectivity to oxide:   13:1
Selectivity to photoresist:  12.5:1
Uniformity:   5%

Normal-rate polysilicon etch:
E/R:   >1800 Ȧ/min
Selectivity to photoresist:   2.5:1
Uniformity:   5%

AST Metal Etcher (AST Cirie-200 Metal etcher)
Chlorine & fluorine-based barrel-type system for etching aluminum
Gases available:   Cl2, BCl3, CF4, CHF3, He, Ar, O2 & N2
RF power:   1000 W (max.) at 13.56 MHz
Bias power:   1000 W (max.) at 13.56 MHz
Substrate size:   4" wafers
Aluminum Etch
Al etch rate:   1700 Ȧ/min
PR etch rate:   1000 Ȧ/min
SiOx etch rate:   300 Ȧ/min

Lam 490 Etcher

Fluorine- & chlorine- based parallel-plate system for etching polysilicon & nitride with endpoint detection
Gases available:   SF6, He, O2, C2F
RF power:   650 W (max.) at 13.56 MHz
Substrate size:   4” single wafers

Polysilicon etch with chlorine-based gases:
E/R: 4000 Ȧ/min
Selectivity to oxide: 20:1
Selectivity to photoresist: 1.5:1
Uniformity: 7.5%

Polysilicon etch with fluorine-based gases:
E/R: 5000 Ȧ/min
Selectivity to oxide: 20:1
Selectivity to photoresist: 1.5:1
Uniformity: 10%

Silicon nitride etch with fluorine-based gases:
E/R: 1000 Ȧ/min
Selectivity to oxide: 3:1
Selectivity to photoresist: 1.5:1
Uniformity: 5%


NFF RIE Etcher

Gases available:   CF4, CHF3, SF6 and O2
RF power:  120 W
Chiller temperature:   20 oC
Fully automatic loadlock transfer system
Substrate size:   4" wafers
Nitride etch rate:   ~500 Ȧ/min
Oxide etch rate:   ~460 Ȧ/min
Si etch rate:   ~50 to 470 Ȧ/min
Photoresist etch rate:   ~151 to 400 Ȧ/min


Oxford Aluminum Etcher (Oxford Cobra 100 Aluminum Etcher)

Gases available:   Cl2, BCl3, HBr, CF4, SF6, O2 and Ar
RF power sources:  
1 × 3000 W (max.) at 13.56 MHz for the coil electrode
1 × 300 W (max.) at 13.56 MHz for the platen electrode
Electrode coolant system:   5 to 60 oC
High-speed turbo molecular pump:   pumping speed of 1250 L/s at 37800 rpm
Fully automatic loadlock transfer system
Substrate size:   4" wafers

Aluminum/Aluminum-Si etch:
Minimum line/space: 0.5 µm
High-rate aluminum etch E/R: 3000 Ȧ/min
Normal-rate aluminum etch E/R: 1800 Ȧ/min
Selectivity to photoresist: > 2:1
Selectivity to oxide: > 10:1
Uniformity: 5% (etch from edge to center)


Oxford RIE Etcher (Oxford 80 Plus RIE Etcher)

Gases available:   CHF3, SF6, O2, CF4, Ar, N2, He & H2
RF power:   500 W at 13.56 MHz 
Huber electrode coolant system:   -40 to 200 oC
Substrate sizes:   4" wafers, up to 3 wafers per run or specimen

Silicon dioxide etch:
E/R:   ~363 Ȧ/min for LTO
E/R:   ~352 Ȧ/min for thermal oxide
Selectivity to photoresist:   2.6:1
Selectivity to silicon nitride:  0.8:1
Selectivity to silicon:   6.7:1
Uniformity:   3.6%

Silicon nitride etch:
E/R:   ~810 Ȧ/min
Selectivity to photoresist:   1.5:1
Selectivity to silicon dioxide:   2.1:1
Selectivity to silicon:  5.4:1
Uniformity:   5.8%


Trion RIE Etcher (Trion Phantom III RIE etcher)
Gases available:   CHF3, SF6, O2, CF4, Ar, N2, He & H2
ICP power:  600 W (max.) at 13.56 MHz
RF power:   600 W (max.) at 13.56 MHz
Electrode coolant system:  0 to 30 oC
Substrate sizes:  4" wafers, up to 3 wafers per run or specimens
Silicon dioxide etch:  ~500 Ȧ/min
Silicon nitride etch:  ~850 Ȧ/min

XeF2 Silicon Etcher
Gases available:   XeF2
Substrate sizes:   2", 4" single wafers or specimens

Silicon Etch Rate:
Bright-field mask:   600 Ȧ/cycle
Dark-field mask:   6000 Ȧ/cycle
Mask used:   Oxide

IPC 3000 Asher #1 and #2 (Branson IPC 3000 Asher)

Gases available:   O2 & N2
Microwave power:   400 W (max.) at 13.56 MHz
Substrate sizes:   2", 4" and 6" wafers or specimens


IPC 3000 Asher #3 (Branson IPC 3000 Asher)

Gases available:   O2 & N2
RF power:   400 W (max.) at 13.56 MHz
Substrate sizes:   2", 4" and 6" wafers or specimens


PS210 Asher (Tepla PS210 Asher (Microwave))
Gases available:   O2 & N2
Microwave power:   2.45 GHz
Substrate size:   4" wafers

Critical Point Dryer
  • Tousmis Automegasamdri®-915B, Series-B Critical Point Dryer
  • Automatic supercritical point dryer
  • All internal surfaces are inert to CO2 and ultra-pure alcohols.
  • 0.08 µm internal filtration system delivers clean filtered LCO2 to the process chamber.
  • Small samples and up to 6" wafers
  • Up to five wafers per single process
Sputtering
ARC-12M Sputterer
Gases available:   Ar, O2 & N2
DC sputtering power:   2 × 250 W
RF sputtering power:   600 W at 13.56 MHz
Chamber pressure:   1.5 x 10-5 torr
Substrate sizes:   2", 4" wafer or square glass, or specimens
Targets available:   Ag, Al, Al/Si (1%), Au, Cu, Cr, Hf, Mo, Pt, Ti, TiW, Ni

CVC-601 Sputterer

Gases available:   Ar & N2
DC sputtering power:   1 × 3 kW
RF sputtering power:   1200 W at 13.56 MHz
Chamber pressure:   5 × 10-7 torr
Substrate sizes:   2", 4" & 6" wafers or 4" square glass substrates
Targets available:   Cu, TiW & Au
Targets available on request:   Ti, Cr & Al-Si

Sputtering rate (Ȧ/min):
~500 Ȧ/min for Al-Si
~175 Ȧ/min for TiW
~160 Ȧ/min for Au
~1,000 Ȧ/min for Cu

No photoresist on wafers is allowed.


Denton Sputterer (Denton Explorer 14 Sputterer)

Gases available:   N2 (for venting) & Ar
DC sputtering power:   2 × 600 V
RF sputtering power:   600 W at 13.56 MHz
Chamber pressure:   5 × 10-7 torr
Substrate sizes:  2" to 6" wafers or 4" square glasses, or specimens
Targets available:   TiW, Ti, Al (pure), Cu, AlSi & Ag

Sputtering rate (Ȧ/min):
~88 Ȧ/min for Ti
~148 Ȧ/min for TiW
~100 Ȧ/min for Al (pure)
~127 Ȧ/min for AlSi
~321 Ȧ/min for Cu
~857 Ȧ/min for Ag


Edward Sputterer (Au) for SEM

Gases available:   Ar
RF power:  100 W at 13.56 MHz 
Chamber pressure:   1 × 10-3 torr
Substrate sizes:   2" and 4" wafers or square glasses, or specimens
Targets available:   Au (For SEM only)


NSC3000 Sputterer (Nano-Master NSC3000 Sputterer)

Gases available:   O2, N2 & Ar
DC sputtering power:  1 × 1 kW
Chamber pressure:   5 × 10-6 torr
Substrate sizes:   2", 4" wafers or square glasses, or specimens
Targets available:   Al, Ti, Cr, Al-Si & Ni


Varian 3180 Sputterer
Gases available:   Ar & N2
DC sputtering power:  3 × 12 kW
RF back-sputtering power:   600 W at 13.56 MHz
Fully automatic wafer-handling system 
Substrate size:  4" wafers
Chamber pressure:  5 × 10-7 torr
Targets available:  Mo, Pure Al, Al-Si & Ti

Sputtering rate (Ȧ/sec):
~160 Ȧ/sec for pure Al
~180 Ȧ/sec for Al/Si (1%)
~40 Ȧ/sec for Ti
~160 Ȧ/sec for Mo

No photoresist on wafers is allowed.
Evaporation
AST 450I Evaporator (AST Pava-450I E-Beam Evaporator)
Gases available:   N2
E-beam power:   1 × 3 kW
Chamber pressure:   9 × 10-8 torr
Substrate sizes:   2” wafer or specimens
Sources available:   Al, Ti, Au & Ni

AST 600EI Evaporator (AST Pava-600EI E-Beam Evaporator)
Gases available:    O2 and N2
E-beam power:   2 × 6 kW
Chamber pressure:   9 × 10-8 torr
Substrate sizes:   2" and 4" wafers or specimens
Sources available:   Al, Au, Ti, Ni, Cr, Ge, Pt, Ag, ITO

Cooke Evaporator #1 and #2 (Cooke E-Beam Evaporator)
Gases available:    N2
E-beam power:   1 × 3 kW
Chamber pressure:   8 × 10-7 torr
Substrate sizes:   2" or 4" wafers
Sources available (in Phase II):   Al, Ni, Mo, Ti, Cr
Sources available (in Phase III (EC)):   Al, Ni, Ti, Au, Cr, Pt, Fe, SiO2, Ag

No photoresist on wafers is allowed for the Cook Evaporation System.